Noise and Equivalent Circuit of Double Injection
نویسنده
چکیده
.Measurements o~ the high-frequ~ncy noi:e of a silicon double-injection diode result in (i'l)=a• 4kT ( 1/r) ~if With a= 1.04 and m agreement With the literature. A new interpretation demands Nyquist noise with a 121 in these devices at high frequencies. This is in accord with an equivalent circuit derived for the doubleinjection process. Speculations are made on the general validity of Nyquist noise in nonlinear devices at high frequencies. In addition, generation-recombination noise is suggested as the prime source of the lowfrequency noise. .
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